Annealing of the radiation-induced defects in natural diamond

Citation
Vn. Amosov et al., Annealing of the radiation-induced defects in natural diamond, TECH PHYS L, 26(6), 2000, pp. 464-466
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
6
Year of publication
2000
Pages
464 - 466
Database
ISI
SICI code
1063-7850(2000)26:6<464:AOTRDI>2.0.ZU;2-X
Abstract
Radiation-induced defects in a natural type IIa diamond were studied by ana lysis of the electronic absorption spectra in the visible range measured up on annealing of the pre-irradiated samples for various times at 550 degrees C. Equations describing the growth and decay of intensity for the absorpti on peaks of seven defects are presented. (C) 2000 MAIK "Nauka/Interperiodic a".