Transformation of GR1 defects in annealed natural type IIa diamonds

Citation
Ag. Alekseev et al., Transformation of GR1 defects in annealed natural type IIa diamonds, TECH PHYS L, 26(6), 2000, pp. 496-498
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
6
Year of publication
2000
Pages
496 - 498
Database
ISI
SICI code
1063-7850(2000)26:6<496:TOGDIA>2.0.ZU;2-3
Abstract
A sample of the natural type IIa diamond was pre-irradiated in a nuclear re actor and then annealed under isothermal conditions at 550 degrees C. The e xperimental data were used to calculate a decrease in concentration of the neutral vacancy defect called GR1, corresponding to a phononless band (PLB) at 741 nm, and an increase in concentration of the derivative defect H3 wi th PLB at 503.2 nm for a broad range of annealing times (0-300 h) and tempe ratures (100-900 degrees C). Calculations performed using a single activati on energy E-m = 2.43 eV for both fast and slow components of the GR1 defect transformation process indicate that the annealing of GR1 and the producti on of H3 are really observable above 450 degrees C (400 degrees C being the threshold temperature). At 700-900 degrees C, the fast component contribut es over the annealing time interval 0.002-0.251 h, after which the annealin g of GR1 is determined by the slow component alone. (C) 2000 MAIK "Nauka/In terperiodica".