The formation and properties of surface phosphide on (100)W

Authors
Gall, NR Rut'kov, EV Tontegode, AY
Citation
Nr. Gall et al., The formation and properties of surface phosphide on (100)W, TECH PHYS L, 26(6), 2000, pp. 510-513
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
6
Year of publication
2000
Pages
510 - 513
Database
ISI
SICI code
1063-7850(2000)26:6<510:TFAPOS>2.0.ZU;2-6
Abstract
Adsorption of PCl3 molecules on the (100)W surface has been studied over a wide temperature range from 300 to 2000 K. It is shown that adsorption at T > 1100 K results in the formation of a surface tungsten phosphide with the WP composition and a surface concentration of phosphorus atoms of (1 +/- 0 .15) x 10(15) cm(-2). Adsorption of silicon atoms on the surface phosphide at 1300 K results in the displacement of phosphorus atoms from the surface and their replacement by silicon atoms. (C) 2000 MAIK "Nauka/Interperiodica ".