Atomic relocations in a two-layer Al/Ni system bombarded with ions having energies close to the sputtering threshold

Collision cascades developed at 300 K in a Ni single crystal and in a syste m comprising a monolayer of Al atoms on the Ni(100) single crystal face bom barded at normal incidence by 25- and 50-eV Ar and Xe atoms were simulated by method of molecular dynamics. It was found that the number of atoms relo cated through the Al-Ni interface markedly exceeds the number of analogous relocations in the nickel single crystal. (C) 2000 MAIK "Nauka/Interperiodi ca".