The effect of illumination on the electric and photoelectric properties ofmu c-Si : H films weakly doped with boron

Citation
Ag. Kazanskii et al., The effect of illumination on the electric and photoelectric properties ofmu c-Si : H films weakly doped with boron, TECH PHYS L, 26(5), 2000, pp. 410-411
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
5
Year of publication
2000
Pages
410 - 411
Database
ISI
SICI code
1063-7850(2000)26:5<410:TEOIOT>2.0.ZU;2-F
Abstract
The electric conductivity and photoconductivity of mu c-Si : H films weakly doped with boron increase upon exposure of the samples to light in the ban d of intrinsic absorption. It is shown that the effect is related to change s in the ambient medium, probably, to the photoinduced charging of oxygen m olecules adsorbed on the mu c-Si : H films. (C) 2000 MAIK "Nauka/Interperio dica".