Data on the effect of ultrasound on the metal-oxide-semiconductor structure
s preliminary irradiated by gamma-quanta are presented. It is demonstrated
that the ultrasonic action results in a decrease of the radiation-induced c
harge in the dielectric layer of the structures under study. The observed e
ffects are explained using a mechanism of the ultrasound-stimulated diffusi
on of radiation defects in the field of elastic stresses in the layer of si
licon dioxide. (C) 2000 MAIK "Nauka/Interperiodica".