The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

Authors
Parchinskii, PB Vlasov, SI Muminov, RA Ismailov, KK Turgunov, UT
Citation
Pb. Parchinskii et al., The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures, TECH PHYS L, 26(5), 2000, pp. 420-422
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
5
Year of publication
2000
Pages
420 - 422
Database
ISI
SICI code
1063-7850(2000)26:5<420:TEOUOT>2.0.ZU;2-D
Abstract
Data on the effect of ultrasound on the metal-oxide-semiconductor structure s preliminary irradiated by gamma-quanta are presented. It is demonstrated that the ultrasonic action results in a decrease of the radiation-induced c harge in the dielectric layer of the structures under study. The observed e ffects are explained using a mechanism of the ultrasound-stimulated diffusi on of radiation defects in the field of elastic stresses in the layer of si licon dioxide. (C) 2000 MAIK "Nauka/Interperiodica".