Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m

Authors
Tsyrlin, GE Polyakov, NK Egorov, VA Petrov, VN Volovik, BV Sizov, DS Tsatsul'nikov, AF Ustinov, VM
Citation
Ge. Tsyrlin et al., Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m, TECH PHYS L, 26(5), 2000, pp. 423-425
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
5
Year of publication
2000
Pages
423 - 425
Database
ISI
SICI code
1063-7850(2000)26:5<423:MSWQDI>2.0.ZU;2-N
Abstract
The optical properties of multilayer structures with quantum dots in the he teroepitaxial InAs/GaAs system have been studied. The structures were obtai ned by the method of submonolayer migration-stimulated epitaxy. It is shown that the optimized growth conditions provide room-temperature luminescence at a wavelength of 1.3 mu m. (C) 2000 MAIK "Nauka/Interperiodica".