Nonlinear current-voltage characteristics of the cross-shaped microstructures based on thin bismuth films

Authors
Il'in, AI Aparshina, AI Dubonos, SV Tolkunov, BN
Citation
Ai. Il'In et al., Nonlinear current-voltage characteristics of the cross-shaped microstructures based on thin bismuth films, TECH PHYS L, 26(5), 2000, pp. 439-442
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
5
Year of publication
2000
Pages
439 - 442
Database
ISI
SICI code
1063-7850(2000)26:5<439:NCCOTC>2.0.ZU;2-F
Abstract
The deposition of bismuth films under a residual gas pressure 10(-6) Pa res ults in the "metal-type" variation of conductivity at low temperatures. Con ductivity of the cross-shaped microstructures based on these films exhibits the properties analogues to those of the ballistic electron transport in 2 D systems. (C) 2000 MAIK "Nauka/Interperiodica".