Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

Authors
Volovik, BV Kovsh, AR Passenberg, W Kuenzel, H Ledentsov, NN Ustinov, VM
Citation
Bv. Volovik et al., Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells, TECH PHYS L, 26(5), 2000, pp. 443-445
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
5
Year of publication
2000
Pages
443 - 445
Database
ISI
SICI code
1063-7850(2000)26:5<443:LEIIHW>2.0.ZU;2-F
Abstract
The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-w avelength emission in the InGaAsN quantum wells is obtained in the waveleng th range up to 1.32 mu m at room temperature. The effect of the InGaAsN qua ntum parameters on the optical properties of heterostructures is studied. ( C) 2000 MAIK "Nauka/Interperiodica".