The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs
substrates were studied. The GaAsN layers containing InGaAsN quantum wells
with a high (exceeding 1%) nitrogen concentration were obtained. The long-w
avelength emission in the InGaAsN quantum wells is obtained in the waveleng
th range up to 1.32 mu m at room temperature. The effect of the InGaAsN qua
ntum parameters on the optical properties of heterostructures is studied. (
C) 2000 MAIK "Nauka/Interperiodica".