Rates of reactions of H atoms with some CVD precursors

Authors
Arthur, NL Cooper, IA Czerwinski, A Miles, LA
Citation
Nl. Arthur et al., Rates of reactions of H atoms with some CVD precursors, THIN SOL FI, 368(2), 2000, pp. 176-180
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
368
Issue
2
Year of publication
2000
Pages
176 - 180
Database
ISI
SICI code
0040-6090(20000615)368:2<176:ROROHA>2.0.ZU;2-C
Abstract
Rate constants have been measured for the reactions of H atoms with SiH4, C H3SiH3, (CH3)(2)SiH2, (CH3)(3)SiH, GeH4, GeD4, CH3GeH3, (CH3)(2)GeH2, (CH3) (3)GeH, PH3 and AsH3, over a range of temperatures, in pulsed photolysis ex periments in which H atoms were generated by the HE-sensitized photolysis ( 253.7 nm) of H-2 and monitored by Lyman-alpha (121.6 nm) absorption. Reacti vity trends are identified and the relationship with the corresponding ther mochemistry is discussed. (C) 2000 Elsevier Science S.A. All tights reserve d.