Citation
Y. Liao et al., Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition, THIN SOL FI, 368(2), 2000, pp. 211-215
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
368
Issue
2
Year of publication
2000
Pages
211 - 215
Database
ISI
SICI code
0040-6090(20000615)368:2<211:SODFGM>2.0.ZU;2-2
Abstract
The nucleation and growth process of diamond film on porous silicon in a ho
t-filament chemical vapor deposition system were investigated. The nucleati
on density of 3.6 x 10(7) cm(-2) was obtained. We find that almost all of t
he nuclei occur at the edge of the etched pores, and the continuous diamond
films are successfully deposited without seeding diamond particles. The ch
aracters of diamond films were determined by scanning electronic microscopy
, Raman spectra and X-ray photoelectron spectroscopy. No strains are found
in diamond films, and no intermediates are found between the films and poro
us silicon substrates. (C) 2000 Elsevier Science S.A. All rights reserved.