Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs stra ined layers on GaAs (001) substrate have been carried out by using DC activ e Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure paramete rs affecting the properties of GaNAs/GaAs heterostructure were studied; the y were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickn ess of GaNAs strained layer. XRD and PL measurements showed that superlatti ce with distinct satellite peaks up to two orders and quantum well structur e with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) c an be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published b y Elsevier Science S.A. All rights reserved.