Comparison of deposition behavior of Pb(Zr,Ti)O-3 films and its end-member-oxide films prepared by MOCVD

Pb(Zr,Ti)O-3(PZT) and end-member single oxide, PbO, ZrO2 and TiO2, films we re deposited by metalorganic chemical vapor deposition (MOCVD) from Pb(C11H 19O2)(2)-Zr(O.t-C4H9)(4)-Ti(O.i-C3H7)(4)-O-2 system, Pb(C11H19O2)(2)-O-2 sy stem, Zr(O.t-C4H9)(4)-O-2 system and Ti(O.i-C3H7)(4)-O-2 system, respective ly. The deposition rates of PbO, TiO2 and ZrO2 components in PZT films were investigated as a function of the deposition temperature. The deposition r ates of each components in PZT films were quite different from those of PbO , ZrO2 and TiO2 films. However, the deposition temperature dependencies of the deposition rates of TiO2 and ZrO2 components in PZT films were almost t he same. This resulted in that the Zr/(Zr + Ti) in the film was almost inde pendent of the deposition temperature. On the other hand, the deposition te mperature dependency of the deposition rate of PbO component in PZT film wa s different from those of ZrO2 and TiO2 components. This resulted in that P b/(Pb + Zr + Ti) in PZT film depended on the deposition temperature. The de position temperature dependencies of PbO and TiO2 components in PbTiO3 film were not the same and Pb/(Pb + Ti) in PbTiO3 films also depended on the de position temperature. (C) 2000 Elsevier Science S.A. All rights reserved.