The preparation of nanosized silicon by laser-induced chemical vapour deposition

Authors
Zhang, HY Wei, AX Liu, SH Wang, WX Chen, DH Liang, LH Chen, KX
Citation
Hy. Zhang et al., The preparation of nanosized silicon by laser-induced chemical vapour deposition, THIN SOL FI, 368(2), 2000, pp. 315-318
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
368
Issue
2
Year of publication
2000
Pages
315 - 318
Database
ISI
SICI code
0040-6090(20000615)368:2<315:TPONSB>2.0.ZU;2-G
Abstract
The effect of preparation parameters on the particle size of silicon nanocr ystallite produced by laser-induced chemical vapour deposition (LICVD) was studied. It is found that the particle size of nano-Si prepared by LICVD is related to preparation parameters. We obtained the optimum synthesis param eters for preparation of the right sized nano-Si powder produced by LICVD. The effect of different annealing treatments on the infrared (IR) absorptio n bands of the nanosized silicon was also investigated. (C) 2000 Elsevier S cience S.A. All rights reserved.