Molecular layer epitaxy

Molecular layer epitaxy (MLE) of GaAs related compounds and Si with SiO2 de position has been developed to realize the tera-hertz operating devices. At sufficiently low process temperature, lower than in the conventional growt h method, device quality epitaxial layers were achieved by MLE. In GaAs, 10 0 Angstrom scale static induction transistors are fabricated with MLE. Thes e transistors operated in a mixed ballistic-tunneling mode or in the pure t unneling mode. Basic research on MLE in the field of surface science and ma terial science is performed, from the point of view of device application o f this technology. (C) 2000 Elsevier Science S.A. All rights reserved.