Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Authors
Horvath, ZJ Dozsa, L Van Tuyen, V Podor, B Nemcsics, A Frigeri, P Gombia, E Mosca, R Franchi, S
Citation
Zj. Horvath et al., Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures, THIN SOL FI, 367(1-2), 2000, pp. 89-92
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
367
Issue
1-2
Year of publication
2000
Pages
89 - 92
Database
ISI
SICI code
0040-6090(20000515)367:1-2<89:GAECOI>2.0.ZU;2-O
Abstract
The electrical characteristics of InAs quantum dot and quantum well structu res embedded in GaAs confining layers have been compared and interpreted wi th the effect of the potential barrier and recharging processes of quantum dots and quantum well. (C) 2000 Elsevier Science S.A. All rights reserved.