Electronic structure of MBE grown CdYbTe: photoemission studies

The aim of the work is to present the XPS and UPS studies of a new kind of material MBE grown -CdYbTe thin layers. The analysis of the valence band el ectron states was performed for three samples (with different Yb contents a nd different crystallographic quality) by means of resonant photoemission b ased on the electronic transition between Yb 4d-4f shells. Analysis of Cd 3 d, Te 3d and Yb 4d-4f core levels made by XPS gave the qualitative informat ion about the samples before and after Argon ion sputtering. The photoemiss ion spectra for the CdYbTe sample containing 5% Yb, which corresponds to th e limit of Yb solubility, were compared with the spectra of the CdYbTe samp le with 1% Yb, By means of resonant photoemission Ytterbium was found in tw o charge states Yb(+2) and Yb(+3). (C) 2000 Elsevier Science S.A, All right s reserved.