Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals

Citation
Yl. Soo et al., Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals, APPL PHYS L, 76(25), 2000, pp. 3729-3731
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
25
Year of publication
2000
Pages
3729 - 3731
Database
ISI
SICI code
0003-6951(20000619)76:25<3729:EOHTOD>2.0.ZU;2-5
Abstract
Angular dependence of x-ray fluorescence and x-ray absorption fine structur e techniques have been used to study the diffusion of Cu atoms into the pho tovoltaic material CdTe. Depth profile, effective valency, and local struct ure of Cu atoms in a Cu-doped single crystal of CdTe were investigated befo re and after a second heat treatment. Enhanced Cu diffusion into the CdTe s ingle crystal was observed as a result of heating at a moderate temperature around 200 degrees C, resulting in a redistribution of the Cu impurities t hrough a broader depth profile. Some of the Cu atoms are believed either to form small complexes with Te or occupy interstitial sites in the host but accompanied by a large local lattice distortion while others substitute for Cd on the cation sites. The results thus demonstrate that these nondestruc tive x-ray characterization methods are useful for probing microstructural changes in CdTe photovoltaic materials/devices in which some Cu-containing compounds are used as back contacts. (C) 2000 American Institute of Physics . [S0003-6951(00)03625-1].