Strain relief via trench formation in Ge/Si(100) islands

Authors
Chaparro, SA Zhang, Y Drucker, J
Citation
Sa. Chaparro et al., Strain relief via trench formation in Ge/Si(100) islands, APPL PHYS L, 76(24), 2000, pp. 3534-3536
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
24
Year of publication
2000
Pages
3534 - 3536
Database
ISI
SICI code
0003-6951(20000612)76:24<3534:SRVTFI>2.0.ZU;2-R
Abstract
Trenches formed at Ge/Si(100) island bases become an effective strain-relie f mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench de pth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin. (C) 2000 American Institute of Physi cs. [S0003-6951(00)02224-5].