Er-carrier interaction and its effects on the Er3+ luminescence of erbium-doped Si/SiO2 superlattices

The Er-carrier interaction and its effects on the Er3+ photoluminescence pr operties of erbium-doped Si/SiO2 superlattices are investigated. The intera ction between the erbium atoms and the electronic carriers was controlled b y doping erbium into the SiO2 layers only and by depositing buffer layers o f pure SiO2 between the erbium-doped SiO2 layers and the Si layers. We demo nstrate that by controlling the erbium-carrier interaction, a three orders of the magnitude enhancement of the Er3+ luminescence intensity and a nearl y complete suppression of the temperature-induced quenching of Er3+ lumines cence can be achieved while still allowing the Er3+ ions to be excited by t he carriers. We identify the asymmetry between the dominant carrier-mediate d excitation and the de-excitation paths of Er3+ ions as the possible cause for the observed effects. (C) 2000 American Institute of Physics. [S0003-6 951(00)02324-X].