Electronic structure of InNxAs1-x alloys from tight-binding calculations

Authors
Tit, N Dharma-wardana, MWC
Citation
N. Tit et Mwc. Dharma-wardana, Electronic structure of InNxAs1-x alloys from tight-binding calculations, APPL PHYS L, 76(24), 2000, pp. 3576-3578
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
24
Year of publication
2000
Pages
3576 - 3578
Database
ISI
SICI code
0003-6951(20000612)76:24<3576:ESOIAF>2.0.ZU;2-4
Abstract
We present tight-binding band-structure calculations for InNxAs1-x alloys a s a function of the nitrogen concentration. The high-concentration regime i s found to be extremely sensitive to x. The low-concentration region (0 < x < 0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assum ed valence-band offsets on the band gap are reported. (C) 2000 American Ins titute of Physics. [S0003-6951(00)03724-4].