Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

Authors
Krishna, S Qasaimeh, O Bhattacharya, P McCann, PJ Namjou, K
Citation
S. Krishna et al., Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser, APPL PHYS L, 76(23), 2000, pp. 3355-3357
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
23
Year of publication
2000
Pages
3355 - 3357
Database
ISI
SICI code
0003-6951(20000605)76:23<3355:RFEFAS>2.0.ZU;2-E
Abstract
Far-infrared spontaneous emission at 300 K and lower temperatures, due to i ntersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, h as been characterized. Measurements were made with a multidot layer near-in frared (similar to 1 mu m) interband laser. The far-infrared signal, center ed at 12 mu m, was enhanced after the interband transition reached threshol d at 300 K. The results are explained in terms of the carrier dynamics in t he dots. (C) 2000 American Institute of Physics. [S0003-6951(00)04923-8].