Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering

We report the observation of visible cathodoluminescence (CL) of Tb ions im planted into amorphous AIN films produced by sputtering. The implanted samp les, were subjected to thermal annealing treatment up to 1100 degrees C to optically activate the incorporated ions. The results show that up to 1000 degrees C annealing temperature the films remain amorphous and the Tb3+ emi ssion intensity increases. The amorphous AIN:Tb films were characterized by x-ray diffraction, CL, and CL kinetics measurements. The sharp characteris tic emission lines corresponding to intra-4f(n)-shell transitions are resol ved in the spectral range from 350 to 750 nm, and observed over the tempera ture range from 7 to 330 K due to the transitions from D-5(3) and D-5(4) le vels reward the F-5(J) (J = 2 to 6) multiplets. Finally, CL kinetics measur ements have revealed that decay times of D-3(3) -->F-7(J) and D-5(4)-->F-7( J) transitions are in the range 0.94-0.77 and 0.49-1.61 ms at 300 K, respec tively. (C) 2000 American Institute of Physics. [S0003-6951(00)02223-3].