Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling

It has been shown recently that Au labeling [V. C. Venezia, D. J. Eaglesham , T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Bauma nn, Appl. Phys. Lett. 73, 2980 (1998)] can be used to profile vacancy-type defects located near half the projected range (1/2R(p)) in MeV-implanted Si . In this letter, we have determined the ratio of vacancies annihilated to Au atoms trapped (calibration factor ''k'') for the Au-labeling technique. The calibration experiment consisted of three steps: (1) a 2 MeV Si+ implan t into Si(100) followed by annealing at 815 degrees C to form stable excess vacancy defects; (2) controlled injection of interstitials in the 1/2R(p) region of the above implant via 600 keV Si+ ions followed by annealing to d issolve the {311} defects; and (3) Au labeling. The reduction in An concent ration in the near-surface region (0.1-1.6 mu m) with increasing interstiti al injection provides the most direct evidence so far that An labeling dete cts the vacancy-type defects. By correlating this reduction in Au with the known number of interstitials injected, it was determined that k = 1.2+/-0. 2 vacancies per trapped Au atom. (C) 2000 American Institute of Physics. [S 0003-6951(00)00723-3].