Origin of preferential orthorhombic twinning in SrRuO3 epitaxial thin firms

Citation
Jp. Maria et al., Origin of preferential orthorhombic twinning in SrRuO3 epitaxial thin firms, APPL PHYS L, 76(23), 2000, pp. 3382-3384
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
23
Year of publication
2000
Pages
3382 - 3384
Database
ISI
SICI code
0003-6951(20000605)76:23<3382:OOPOTI>2.0.ZU;2-V
Abstract
In order to elucidate the driving forces which promote oriented in-plane cr ystallographic texture: in SrRuO3 thin films deposited on stepped SrTiO3 su bstrates, a high-temperature x-ray analysis of both SrRuO3 thin films and p owders was conducted. Structural phase transitions were found at temperatur es near 350 degrees C and slightly above 600 degrees C. The transitions are tentatively indexed as orthorhombic to tetragonal and tetragonal to cubic, respectively. These results suggest that SrBuO3 thin films grow with cubic symmetry. As such, Aim-substrate interfacial characteristics, rather than a preferred growth direction, are believed to determine the orientation of orthorhombic twins. (C) 2000 American Institute of Physics. [S0003-6951(00) 00423-X].