Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

Authors
Fiore, A Borri, P Langbein, W Hvam, JM Oesterle, U Houdre, R Stanley, RP Ilegems, M
Citation
A. Fiore et al., Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m, APPL PHYS L, 76(23), 2000, pp. 3430-3432
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
23
Year of publication
2000
Pages
3430 - 3432
Database
ISI
SICI code
0003-6951(20000605)76:23<3430:TOCOIQ>2.0.ZU;2-5
Abstract
We present the rime-resolved optical characterization of InAs/InGaAs self-a ssembled quantum dots emitting at 1.3 mu m at room temperature. The photolu minescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicati ng a fast capture and relaxation of carriers inside the dots. (C) 2000 Amer ican Institute of Physics. [S0003-6951(00)05123-8].