Electron tunneling experiments on skutterudite Co1-xFexSb3 semiconductors

Citation
J. Nagao et al., Electron tunneling experiments on skutterudite Co1-xFexSb3 semiconductors, APPL PHYS L, 76(23), 2000, pp. 3436-3438
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
23
Year of publication
2000
Pages
3436 - 3438
Database
ISI
SICI code
0003-6951(20000605)76:23<3436:ETEOSC>2.0.ZU;2-T
Abstract
Electron tunneling experiments were performed on p-Col(1-x)Fe(x)Sb(3)-Al-ox ide-Al junctions for x = 0 and x = 0.1 at 4.2 K. A U-shaped tunneling condu ctance curve obtained for polycrystalline p-CoSb3 clearly shows an energy-b and gap of similar to 50 meV. For p-Co0.9Fe0.1Sb3 skutterudites, a strong z ero-bias conductance anomaly is observed. This anomaly may be due to a stru ctural disorder arising from defects such as vacancies and interstitial Fe atoms. (C) 2000 American Institute of Physics. [S0003-6951(00)00223-0].