Sl. Gu et al., Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN, APPL PHYS L, 76(23), 2000, pp. 3454-3456
ZnO buffer layers have been used in the hydride vapor phase epitaxy of GaN
in order to improve the initial nucleation and growth of the GaN and hence
the subsequent materials properties. The specific role of the ZnO buffer la
yer was investigated by x-ray photoelectron spectroscopy and x-ray diffract
ion. The improvements in the GaN growth behavior are attributed to the form
ation of a thin surface layer of ZnAl2O4 that results from a reaction-diffu
sion process between the ZnO and Al2O3. This layer can provide an improved
lattice match to GaN as well as change in surface energy affecting the init
ial growth of the GaN. (C) 2000 American Institute of Physics. [S0003-6951(
00)01323-1].