Citation
Dn. Bose et al., Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence, APPL SURF S, 158(1-2), 2000, pp. 16-20
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
158
Issue
1-2
Year of publication
2000
Pages
16 - 20
Database
ISI
SICI code
0169-4332(200005)158:1-2<16:DOWWIA>2.0.ZU;2-5
Abstract
The well and barrier widths of MOVPE-grown In1-xGaxAs/InP (x = 0.47) quantu
m well (QW) structures have been examined by secondary ion mass spectroscop
y (SIMS). The well widths varying from 25 to 150 Angstrom were also estimat
ed through photoluminescence (PL) measurements. It was found that the diffe
rences in estimation of well width by PL and SIMS are due to differences in
sputtering rates between InGaAs and InP during SIMS measurements, the rate
being found to be 1.38-1.97 times less for the former. The presence of int
erfacial layers of similar to 2 monolayers width between well and barrier w
ith low sputtering rate was also inferred. (C) 2000 published by Elsevier S
cience B.V. All rights reserved.