Growth of CuS thin films by the successive ionic layer adsorption and reaction method

Authors
Lindroos, S Arnold, A Leskela, M
Citation
S. Lindroos et al., Growth of CuS thin films by the successive ionic layer adsorption and reaction method, APPL SURF S, 158(1-2), 2000, pp. 75-80
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
158
Issue
1-2
Year of publication
2000
Pages
75 - 80
Database
ISI
SICI code
0169-4332(200005)158:1-2<75:GOCTFB>2.0.ZU;2-E
Abstract
The growth of copper sulfide thin films by the successive ionic layer adsor ption and reaction (SILAR) method at room temperature and normal pressure w as studied. The CuS films were characterized by chemical analysis, XRD, SEM and UV spectroscopy, The growth rate of CuS was proportional to copper pre cursor concentration. The films were polycrystalline and showed no preferre d orientation. The surface of the CuS thin films was rough compared with Cd S films, which were used as buffer layer on ITO and glass substrates to enh ance the weak adhesion of CuS to oxide surfaces. (C) 2000 Elsevier Science B.V. All rights reserved.