Multiphoton ionization detection of SiF radicals in SiF4 plasmas

A newly constructed plasma molecular beam apparatus has been employed to st udy SiF radicals produced in a SiF, plasma. The SiF radicals are detected u sing [2 + 1] resonance enhanced multiphoton ionization (REMPI) combined wit h time of flight mass spectrometry (TOFMS). The absorption band from the (1 , 0) C "(2)Sigma(+) <-- X(2)Pi(1/2) transition of the SiF molecule was moni tored. Production of SiF in the plasma has been measured as a function of p lasma parameters, including addition of H-2 and O-2, and applied rf power. (C) 2000 Elsevier Science B.V. All rights reserved.