Optimization of titanium nitride rapid thermal CVD process

Anomalous behavior during TiN growth through rapid thermal low-pressure che mical vapor deposition (RTLPCVD) from gas phase TiCl4-NH3-H-2 has been obse rved. Two deposition temperatures are used (500 degrees C and 800 degrees C ) and two types of deposition process are defined (a long one-step process, and a multiple-step process). Resistivity, structure, composition, and gro wth behavior are examined and discussed in terms of oxygen contamination an d classical nucleation theory. The long one step process is better for mech anical applications, whereas the multiple-step process is more suitable for microelectronics.