A proposal is presented for an effective extraction method for crosstalk mo
del parameters of high-speed interconnection lines, In the extraction proce
dure, mutual capacitance and mutual inductance of the coupled interconnecti
on lines are extracted based on S-parameter measurement, time-domain-reflec
tometry (TDR) measurement and subsequent microwave network analysis. The ex
traction method is useful for characterizing homogeneous guiding structures
, where the propagation of coupled transverse electromagnetic (TEM) modes i
s supported. In contrast to previous extraction methods, the suggested proc
edure requires fewer on-wafer probing steps and does not need matched termi
nations in the test device for high-frequency probing. The extracted models
can be readily used with simulation program with integrated circuit emphas
is (SPICE) circuit simulation. The procedure can also be used for modeling
the crosstalk in packaging structures and multichip module (MCM).
The proposed procedure has been successfully applied to the crosstalk model
extraction of on-chip interconnection lines. Crosstalk model parameters we
re obtained for different line structures, spaces, and widths. Finally, the
validity and reliability of the extracted models were examined by comparin
g a SPICE circuit simulation using the extracted crosstalk model parameters
with high-speed time-domain crosstalk measurement. A close agreement was o
bserved in the amplitude and pulse shape between the simulation and the mea
surement, showing the accuracy and usefulness of the proposed extraction me
thod.