The combination of a GaN laser diode and a 0.85 numerical aperture objectiv
e has achieved an optical storage capacity of over 22 GB. Owing to sufficie
nt modulation ability and low-noise characteristics, GaN semiconductor lase
rs possess adequate quality to be light sources in optical recording system
s. A bit size of 130 nm x 300 nm, corresponding to the areal recording dens
ity of 16.5 Gbit/in.(2), was realized on a six-layered thin-cover phase-cha
nge disk with a crystallization-promoting structure. Each active layer was
inversely stacked and was thermally as well as optically optimized for the
blue-violet light sources. A new small electromagnetic actuator with a ligh
tweight phi 3 mm two-element lens has extended its servo-bandwidth up to 8
kHz and enabled precise focusing control at the data transfer rate of 35 Mb
ps.