Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing

Recrystallization of polycrystalline silicon (poly-Si) film by excimer lase r annealing (ELA) is discussed by considering the experimental results that the three stages of nucleation, textured grain growth and secondary grain growth were observed. Although the phenomenon of nucleation in the amorphou s silicon (a-Si) is understood by considering crystallization from the supe r cooled liquid, the growth mechanisms of the textured grain and secondary grain are not understood by this, because the melting point of poly-Si whic h has already been formed on the entire surface during these growth stages is higher than that of a-Si. The recrystallization mechanism considering th e dislocation movement is introduced to investigate the present phenomenon. It also clarifies the reason why secondary grain growth occurs under the c ritical conditions of laser irradiation energy and shot number. The feasibi lity of nucleation through the super cooled liquid is also discussed.