Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Authors
Ono, N Kitamura, K Nakajima, K Shimanuki, Y
Citation
N. Ono et al., Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method, JPN J A P 1, 39(2A), 2000, pp. 368-371
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
39
Issue
2A
Year of publication
2000
Pages
368 - 371
Database
ISI
SICI code
Abstract
Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000 degrees C. The moduli were calculated f rom the resonance frequencies in the flexural mode of vibration. This metho d for measuring the moduli is thought to be more reliable than using the co nventional tensile tests. Young's mudulus in the temperature range from 800 degrees C to 1000 degrees C did not decrease as much as expected. The depe ndency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 10(18 ) atoms/cm(3).