Three-dimensional simulation of silicon melt flow in electromagnetic Czochralski crystal growth

Citation
W. Wang et al., Three-dimensional simulation of silicon melt flow in electromagnetic Czochralski crystal growth, JPN J A P 1, 39(2A), 2000, pp. 372-377
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
2A
Year of publication
2000
Pages
372 - 377
Database
ISI
SICI code
Abstract
The three-dimensional silicon melt now in Electromagnetic Czochralski (EMCZ ) growth without crucible relation was numerically investigated using the f inite element method. Due to the interaction of an axial magnetic with a co nstant electric current passing through the melt from the growing crystal t o an electrode attached to the melt surface, an electromagnetic force (EMF) was generated. The EMF significantly suppressed the buoyant convection, an d created a large axially elongated vortex in the bulk melt and a small one near the electrode. In EMCZ growth, the heat and mass transfers are thus c ontrolled mostly through the axially elongated vortex driven by the local e lectromagnetic force. The feature of the melt now is in qualitative agreeme nt with experimental observation.