Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer

We have quantitatively analyzed the effect of spectral broadening due to a compositional inhomogeneity in GaInN active layer, on the threshold current density of GaN-based semiconductor lasers. using a simple broadening funct ion model. Since the compositional inhomogeneity in the GaInN active layer directly results in the spectral broadening, we treated a broadening factor as a parameter showing the amount of inhomogeneity. We have shown a relati onship between the threshold current density of GaN-based semiconductor las ers and full-width at half maximum (FWHM) of spontaneous emission spectra f rom the GaInN active layer of the devices, which is a useful information fo r realizing high performance GaN-based semiconductor lasers.