Effects of Te doping on ordering and antiphase boundaries in GaInP

Transmission electron microscope (TEM) and transmission electron diffractio n studies have been performed to investigate the effects of Te doping on or dering and antiphase boundaries (APBs) in organometallic vapour phase epita xial Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 670 degrees C. TEM results show that the behaviour of APBs for the sing ular samples differs from that of the vicinal samples. The density of APBs in the vicinal samples is increased by roughly a factor of 2, whilst that o f the singular samples is slightly increased, as the Te concentration incre ases. APBs are inclined 10-57 degrees from the (001) growth surface. As for the singular samples, the angle seems to remain virtually unchanged with i ncreasing doping level. However, for the vicinal samples, the angle decreas es significantly with increasing concentration. A simple model is presented to explain the dopant concentration dependence of the behaviour of APBs in the ordered GaInP.