Crystallization of Sr0.5Ba0.5Nb2O6 thin films on LaNiO3 electrodes by RF magnetron reactive sputtering

Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering sy stem. Instead of conventional furnace annealing, SBN thin films are crystal lized by rapid thermal annealing (RTA) above 700 degrees C for 5 min. The t extured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films co mpositions: measured by the electron spectroscopy of chemical analysis (ESC A) quantitative analysis method show nearly the same stoichiometric ratio a s the target. The depth profiles of SBN films and the target are examined b y secondary ion mass spectrometer (SIMS). The concentrations of the films a re quite uniform. After being heal treated at 800 degrees C for 5 min by RT A, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.