Low-temperature deposition of SrRuO3 thin film prepared by metalorganic chemical vapor deposition

SrRuO3 thin films were prepared on (100) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD) at various deposition temperatures from 5 50 degrees C to 750 degrees C. The composition of the film can be controlle d by monitoring the composition of the input source gas. Below 600 degrees C, the degree of a-axis orientation of the film gradually decreased with de creasing deposition temperature. However, the resistivity of the film was a lmost the same fur that reported fur the single crystal and was independent of the deposition temperature when the Ru/(Ru + Sr) ratio of the film was 0.5. The film had almost the same value for the film thickness from 30 to 2 50 nm deposited at 750 degrees C. Moreover, it increased with the Ru/(Ru Sr) ratio below 0.45.