Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting diode

The microscopic spectral emission characteristic of Nichia's blue InGaN sin gle quantum well light-emitting diode is characterized by highly spatially and spectrally resolved scanning electroluminescence microscopy under opera tion. The electroluminescence intensity maps and the emission peak waveleng th images directly image the optical quality of the device and yield quanti tative mappings of the good p-contact quality as well as the small In fluct uations with a spatial resolution of 1 mu m. Band filling effects, i.e, the consecutive filling of the local potential minima is visualized. A highly spectrally resolved measurement proves the existence of very sharp single e mission lines from the localized states.