Raman analysis of wurtzite silicon islands in silicon oxide deposited in N2O-SiH4 plasma process

We report on the deposition of stable wurtzite Si islands in a silicon oxid e deposition process with N2O-Silane plasma ([SiH4] < 2%). They were brough t to the fore by Raman spectroscopy using a high resolution microprobe. By means of group theory, we were able to discriminate among these clusters, w urtzite silicon, diamond silicon and mixed crystals. We showed experimental ly that they were the result of dust formation in the N2O-SiH4 radiofrequen cy discharge.