High-rate epitaxy of anatase films by atmospheric chemical vapor deposition

Citation
S. Tokita et al., High-rate epitaxy of anatase films by atmospheric chemical vapor deposition, JPN J A P 2, 39(2B), 2000, pp. L169-L171
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
2B
Year of publication
2000
Pages
L169 - L171
Database
ISI
SICI code
Abstract
Crystalline orientation often provides particularly the anisotropy of chemi cal and physical properties. Since the epitaxial films are composed of high ly oriented crystals, it is expected that chemical and physical advantages are predominantly in one specific direction. In this study, high-rate epita xy of anatase films was attempted using a chemical-vapor-deposition techniq ue. Four types of epitaxial anatase films were obtained, i.e., (112), (110) , (100) and (001) oriented normal to the substrate surface. These films red uced methylene blue under ultraviolet irradiation. The reduction rate of me thylene blue was largely affected in the direction of crystalline orientati on.