The Anderson-Newns model is used to study substrate-mediated interactions b
etween adatoms on sp-hybrid semiconductors. The Dyson-equation technique is
employed to obtain the adatom Green function and density of states in term
s of Chebyshev polynomials. Expressions for the chemisorption and interacti
on energies, plus charge transfer, as functions of adatom separation, d, ar
e derived in a self-consistent manner. Results are provided for H-H adsorpt
ion on the (100) and (111) faces of Si and Ge. The H-H indirect interaction
is shown to obey a d(2) [or d(-3)] law for the (100) [or (111)] faces. (C)
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