Hs. Kuo et Wt. Tsai, Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry, J ELCHEM SO, 147(6), 2000, pp. 2136-2142
The electrochemical behavior of Al in phosphoric acid base slurry was inves
tigated under chemical mechanical polishing (CMP) condition. The effect of
applied potential on the CMP metal removal rate was also evaluated. The res
ults from potentiodynamic polarization curve measurements indicated that a
contact pressure in the range of 3 to 9 psi greatly modified the passivatio
n behavior of Al in 5 vol % H3PO4 + 0.5 M citric acid + 5 wt % Al2O3 slurry
by a decrease in corrosion potential and an increase in passive current de
nsity. The experimental results also showed that CMP removal rate strongly
depended on the contact pressure and potential applied. The potential depen
dence behavior of the removal rate could be divided into three regions depe
nding on the direction of polarization and the magnitude of potential appli
ed. The results of electrochemical impedance spectroscopy and Auger electro
n spectroscopy examinations showed that passive film formation on Al in the
resting slurry was affected by the applied potential, which in term caused
a change in the relative contribution of the corrosion and mechanical abra
sion to the total removal rate of Al. (C) 2000 The Electrochemical Society.
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