Diamond growth mechanisms in various environments

Citation
A. Gicquel et al., Diamond growth mechanisms in various environments, J ELCHEM SO, 147(6), 2000, pp. 2218-2226
Citations number
35
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
6
Year of publication
2000
Pages
2218 - 2226
Database
ISI
SICI code
0013-4651(200006)147:6<2218:DGMIVE>2.0.ZU;2-I
Abstract
The goal of this study was to improve our understanding of diamond growth r eactors. Direct relationships were set up between key parameters at a micro scale level and diamond film characteristics. The coupled action of plasma variables, such as microwave power density, substrate temperature, and perc entage of methane, on the density of the key species that control diamond g rowth was studied by spectroscopic diagnostics and modeling. The influence of local conditions on the domain of validity of the Van der Drift model, w hich describes texture development from a random distribution of diamond nu clei, is discussed. The results suggested that different chemical kinetic m odels, which depend on plasma conditions, must be used to describe "diamond " growth by chemical vapor deposition. (C) 2000 The Electrochemical Society . S0013-4651(99)08-102-1. FLU rights reserved.