In situ detection of trace levels of copper in hydrofluoric acid

Citation
Aj. Reddy et al., In situ detection of trace levels of copper in hydrofluoric acid, J ELCHEM SO, 147(6), 2000, pp. 2337-2339
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
6
Year of publication
2000
Pages
2337 - 2339
Database
ISI
SICI code
0013-4651(200006)147:6<2337:ISDOTL>2.0.ZU;2-H
Abstract
An in situ monitor for metallic contamination in dilute hydrofluoric acid ( HF) was developed and demonstrated detection of 20 parts per trillion Cu in a 500:1 HF bath. The monitor is based on the contactless measurement of mi nority-carrier lifetime and is designed as part of a point-of-use dilute HF recycling system. Reducible ions in solution were detected as they deposit on the surface of a silicon monitor wafer. The sensitivity of the monitor is determined by (i) the signal-to-noise ratio of the surface coverage meas urement, (ii) rate of metal deposition from the solution of interest, and ( iii) the maximum time allowed for detecting contamination. Such an in situ monitoring system could simultaneously reduce cost of ownership, through li miting yield excursions, and reduce environmental impact by reducing chemic al consumption. (C) 2000 The Electrochemical Society. S0013-4651(99)10-077- 6. All rights reserved.