Measurement of SEU cross sections in the CDF SVX3 ASIC using 63 MeV protons

The single event upset (SEU) cross section has been measured for 63 MeV pro tons incident on static memory cells in the CDF SVX3 pipelined silicon stri p readout ASIC. The device was fabricated in the Honeywell 0.8 mu m RICMOS IV bulk process, and contains a number of cells with minimum gate length tr ansistors to control the mode of operation of the chip. Cross sections per cell of (4.4 +/- 1.8) x 10(-16) cm(2), (2.1 +/- 0.7)x 10(-15) cm(2), and (3 .9 +/- 0.9) x 10(-15) cm(2) cm were measured for angles of incidence of 0 d egrees, 45 degrees, and 80 degrees, respectively, for cells with 0.8 mu m g ate length. The SVX3 SEU rate in Run II at the Fermilab Tevatron was estima ted to be sufficiently low that it would not affect the performance of the CDF Silicon Tracker. (C) 2000 Elsevier Science B.V. All rights reserved.