Preparation of bi-axially aligned YBa2Cu3O7-delta film on CeO2-buffered MgO by chemical solution deposition

We have succeeded in preparing in-plane aligned YBa(2)Cu(3)Q(7-delta) (Y123 ) film by chemical solution deposition (CSD) processing on CeO2 (100)-buffe red MgO (100) substrates. The CeO2 buffer film was deposited on MgO (100) s ingle crystalline substrate by pulsed laser deposition (PLD). For CSD coati ng, a homogeneous coating solution having a molar ratio of Y:Ba:Cu = 1:2:3, was prepared by dissolving metal naphthenates in toluene. This solution wa s spin-coated both on the YSZ (100) and on the CeO2-buffered MgO (100) sing le crystalline substrates. The precursor films were calcined at 425 degrees C and fired at various temperatures under low oxygen partial pressure (pO( 2)). All Y123 films showed strong (00n) peaks, which correspond to c-axis o rientation perpendicular to the substrates and their a/b-axes were in-plane aligned. We confirmed that CeO2 buffer is usable for CSD processing. While the Y123 films on the YSZ reacted with the substrate forming BaZrO3 phase and did not show sufficient superconducting properties. The T-c,T-zero valu e of the Y123 film prepared on CeO2-buffered MgO substrate was 91.5 K and J (c) was 1.2 X 10(5) A/cm(2) at 77 K, 0 T. (C) 2000 Elsevier Science B.V. Al l rights reserved.